Comparative Analysis of Thermal Stress of Si and SiC MOSFETs

Authors

• Shree Chakravarthy Devadas, Electrical & Electronics Engineering, Universiti Teknologi PETRONAS, MalaysiaFollow
• Ramani Kannan, Electrical & Electronics Engineering, Universiti Teknologi PETRONAS, Malaysia

Keywords

Thermal stress, bonding wire lift-of, temperature change, MOSFET.

Document Type

Research Article

Abstract

The performance of power MOSFET is afected by high thermal stress exposure. A high level of thermal stress is induced when the MOSFET experiences a temperature change. This fnding is about the bonding wire lift-of on the solder pad. The MOSFET model is designed with the heatsink to ensure accurate results are obtained in this research work. The key intention of this research is to investigate the condition of silicon and silicon carbide power MOSFETs during thermal stress. The thermal properties of silicon and silicon carbide MOSFET were investigated by developing a 3D modal and thermal stress simulation in the COMSOL Multiphysics software. Thermal resistance was calculated by randomly selecting a power loss value of 100 Watts. Junction temperature for silicon and silicon carbide MOSFET was taken from several articles mentioned in the results and discussion

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Recommended Citation

Devadas, Shree Chakravarthy and Kannan, Ramani (2021) "Comparative Analysis of Thermal Stress of Si and SiC MOSFETs," Platform: A Journal of Engineering (PAJE): Vol. 5: Iss. 2, Article 3.
Available at: https://journal.utp.edu.my/paje/vol5/iss2/3

Publication Date

30-6-2021

First Page

23

Last Page

28